Ultra-I.ow Noise EIFMT Device Models: Application of On-W3fer Crvogenic Noise
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چکیده
Significant advances in the developmcmt of HEMT technology have resulted in high performance cryogenic, 1.,NAs whose noise temperatures arc within an order of magnitude of the quantum noise limit (hv/k). Key to the identification of optimum HEMT structures at cryogenic {temperatures is the clevelopmcnt of on-wafer noise and device parameter extraction techniques.
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تاریخ انتشار 1996